In terms of SiC electronics the current state of the art is defined by discrete devices such as diodes and transistors that are commercially available.  However, the integration of transistors into integrated devices such as operational amplifiers or logic circuits which can operate at high temperatures has been demonstrated only in the laboratory and only for limited durations. 

The baseline use of high temperature, SiC based devices would be as an enabling technology for a Venus robotic mission.

The leading applications would be as pressure and chemical sensors for control and health monitoring in gas turbine and rocket engines.

Key drivers for the creation of a set of SiC building block integrated circuits include the requirements of either a Venus or Mercury robotic exploration mission.  Also, recent developments in the bulk growth of single crystalline SiC hold the promise of very high quality, defect free wafers which would provide the basis for high yield electronic integrated circuits.