For extremely high pressure sensing, a material with higher mechanical properties than silicon is required, namely SiC. In [vonBerg98], a SiC-on-SOI sensor has been characterized under static pressure up to 20MPa up to 300°C. It consist in a 100 µm thick diaphragm (2µm SiC, 200nm Si, 380nm buried oxide and holding Si substrate) with four SiC piezoresistors in Wheatstone bridge. Thin SiC beams have also been used for anemometers to be operated in harsh environments (EADS).