SOI opens new niche markets for integrated circuits to be operated in harsh environment conditions, thanks to the unique resistance of SOI MOS transistors to elevated temperatures, when compared to conventional bulk silicon technology, up to more than 300°C (Honeywell, X-FAB, CISSOID).

Another emerging application most particularly well covered by SOI is the ultra-low power (ULP) area, either at room or at high temperature. This e.g. targets high-precision and low-power interface circuits for integrated sensors. In particular UCL has developed a new family of ULP analog and digital blocks to integrate nanopower sensors interfaces with power dissipation reduced, when compared to previous solutions, by factors ranging from 10 (as in the case of a pacemaker sense channel) up to 10,000 (as in a MOS-only voltage reference, a new memory cell architecture or a low-leakage MOS diode of interest for high-efficiency power management circuits as required in autonomous systems based on energy scavenging or RF powering through an inductive link).